features trenchfet power mosfet 175 c junction temperature new package with low thermal resistance extremely low q gd wfet technology for low switching losses 100% r g tested applications automotive ? eps ? abs ? motor drives SUM110N04-03P vishay siliconix new product document number: 72346 s-32523?rev. b, 08-dec-03 www.vishay.com 1 n-channel 40-v (d-s) 175 c mosfet product summary v (br)dss (v) r ds(on) ( ) i d (a) 40 0.0031 @ v gs = 10 v 110 a d g s n-channel mosfet to-263 s d g top view ordering information: SUM110N04-03P SUM110N04-03P-e3 (lead free) absolute maximum ratings (t c = 25 c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 40 gate-source voltage v gs 20 v continuous drain current (t j = 175 c) t c = 25 c i d 110 a c on ti nuous d ra i n c urren t (t j = 175 c) t c = 125 c i d 110 a a pulsed drain current i dm 440 a avalanche current l = 0 1 mh i as 70 single pulse a valanche energy b l = 0.1 mh e as 211 mj maximum power dissipation b t c = 25 c p d 375 c w maximum power dissipation b t a = 25 c p d 3.75 w operating junction and storage temperature range t j , t stg ? 55 to 175 c thermal resistance ratings parameter symbol limit unit junction-to-ambient pcb mount d r thja 40 c/w junction-to-case (drain) r thjc 0.4 c/w notes a. package limited. b. duty cycle 1%. c. see soa curve for voltage derating. d. when mounted on 1? square pcb (fr-4 material).
SUM110N04-03P vishay siliconix new product www.vishay.com 2 document number: 72346 s-32523?rev. b, 08-dec-03 specifications (t j =25 c unless otherwise noted) parameter symbol test condition min typ max unit static drain-source breakdown voltage v (br)dss v ds = 0 v, i d = 250 a 40 v gate-threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.5 4 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na v ds = 40 v, v gs = 0 v 1 zero gate voltage drain current i dss v ds = 40 v, v gs = 0 v, t j = 125 c 50 a g dss v ds = 40 v, v gs = 0 v, t j = 175 c 250 on-state drain current a i d(on) v ds 5 v, v gs = 10 v 120 a v gs = 10 v, i d = 30 a 0.0025 0.0031 drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 30 a, t j = 125 c 0.0049 ds(on) v gs = 10 v, i d = 30 a, t j = 175 c 0.0059 forward transconductance a g fs v ds = 15 v, i d = 30 a 30 s dynamic b input capacitance c iss 6500 output capacitance c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 1400 pf reverse transfer capacitance c rss 570 total gate charge c q g 90 150 gate-source charge c q gs v ds = 30 v, v gs = 10 v, i d = 110 a 35 nc gate-drain charge c q gd ds , gs , d 22 gate resistance r g f = 1 mhz 0.5 1.1 1.9 turn-on delay time c t d(on) 145 220 rise time c t r v dd = 30 v, r l = 0.27 35 55 ns turn-off delay time c t d(off) v dd = 30 v , r l = 0 . 27 i d 110 a, v gen = 10 v, r g = 2.5 20 30 ns fall time c t f 55 85 source-drain diode ratings and characteristics (t c = 25 c) b continuous current i s 110 a pulsed current i sm 240 a forward voltage a v sd i f = 85 a, v gs = 0 v 1.1 1.5 v reverse recovery time t rr 60 90 ns peak reverse recovery current i rm(rec) i f = 85 a, di/dt = 100 a/ s 2.5 5 a reverse recovery charge q rr 0.075 0.22 c notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. c. independent of operating temperature.
SUM110N04-03P vishay siliconix new product document number: 72346 s-32523?rev. b, 08-dec-03 www.vishay.com 3 typical characteristics (25 c unless noted) 0 2000 4000 6000 8000 0 8 16 24 32 40 0 4 8 12 16 20 0 20 40 60 80 100 120 140 160 0 40 80 120 160 200 240 0 153045607590 0.000 0.001 0.002 0.003 0.004 0.005 0 20 40 60 80 100 120 0 50 100 150 200 250 01234567 0 50 100 150 200 250 0246810 output characteristics transfer characteristics capacitance gate charge transconductance on-resistance vs. drain current v ds ? drain-to-source voltage (v) v gs ? gate-to-source voltage (v) ? drain current (a) i d ? gate-to-source voltage (v) q g ? total gate charge (nc) i d ? drain current (a) v ds ? drain-to-source voltage (v) c ? capacitance (pf) v gs ? transconductance (s) g fs 25 c ? 55 c 6 v t c = 125 c v ds = 30 v i d = 110 a v gs = 10 thru 7 v v gs = 10 v c iss c oss t c = ? 55 c 25 c 125 c 5 v ? on-resistance ( r ds(on) ) ? drain current (a) i d c rss i d ? drain current (a)
SUM110N04-03P vishay siliconix new product www.vishay.com 4 document number: 72346 s-32523?rev. b, 08-dec-03 typical characteristics (25 c unless noted) drain source breakdown vs. junction t emperature avalanche current vs. time 0.0 0.4 0.8 1.2 1.6 2.0 ? 50 ? 25 0 25 50 75 100 125 150 175 on-resistance vs. junction t emperature source-drain diode forward voltage t j ? junction temperature ( c) v sd ? source-to-drain voltage (v) ? source current (a) i s 100 10 1 0.3 0.6 0.9 1.2 v gs = 10 v i d = 30 a t j = 25 c t j = 150 c (normalized) ? on-resistance ( r ds(on) ) 0 44 46 48 50 52 54 56 ? 50 ? 25 0 25 50 75 100 125 150 175 t j ? junction temperature ( c) t in (sec) 1000 10 0.00001 0.001 0.1 1 0.1 (a) i dav 0.01 i av (a) @ t a = 150 c (v) v (br)dss i d = 10 ma 100 1 i av (a) @ t a = 25 c 0.0001
SUM110N04-03P vishay siliconix new product document number: 72346 s-32523?rev. b, 08-dec-03 www.vishay.com 5 thermal ratings safe operating area v ds ? drain-to-source voltage (v) 1000 10 0.1 1 10 100 limited by r ds(on) 0.1 100 t c = 25 c single pulse normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) 2 1 0.1 0.01 10 ? 4 10 ? 3 10 ? 2 10 ? 1 normalized effective transient thermal impedance 1 0.2 0.1 duty cycle = 0.5 ? drain current (a) i d 1 ms 10 s 100 s single pulse 0.05 0.02 1 0 50 100 150 200 250 300 0 25 50 75 100 125 150 175 maximum avalanche and drain current vs. case t emperature t c ? case temperature ( c) ? drain current (a) i d limited by package 10 ms dc, 100 ms
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